GOI is for Ensuring the functionality of gate oxide in
CMOS circuit for the expected lifetime of the product.
High Electric field stress damages the gate oxide
which over a period of time causes the device to fail.
GOI failure rate is measured in FIT (Failure In Time)
rate.
1 FIT = 1 Failure in (10 power 9) device hours or 1
device failure among (10 power 4) devices when
operated for (10 power 5) hours.
GOI reliability of a design is ensured when the FIT
rate of design is < 10 FIT.